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JFET Transistor N-Channel

Part Number: MMBF5484LT1G

Abstract:

Features · Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 3 Reverse Gate-Source Voltage VGS(r) 25 Vdc GATE Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below PD 1 DRAIN TC = 25°C 200 mW Linear Derating Factor 2.8 mW/°C Storage Channel Temperature Range Tstg -65 to +150 °C 3 THERMAL CHARACTERISTICS SOT-23 (TO-236) 1 CASE 318 Characteristic Symbol Max Unit STYLE 10 2 Total Device Dissipation FR-5 Board, PD (Note 1) TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction-to-Ambient RqJA 556 °C/W MARKING DIAGRAM Junction and Storage Temperature TJ, Tstg -55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, dama

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MMBF5484LT1, MMBF5484LT1G

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