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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM

Part Number: TC55VEM208ASGN

Abstract:

The TC55VEM208ASGN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby current (typ) when chip enable (CE) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable (OE ) provides fast memory access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. The TC55VEM208ASGN is available in a plastic 32-pin thin-small-outline package (TSOP).

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Other Part Numbers:

TC55VEM208ASGN, TC55VEM208ASGN40

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