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Part Number: IRF7101
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Abstract:

These dual N and P channel HEXFET® power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFET® power MOSFETs arewell known for, provides the designer with an extremely efficient and reliabledevice for use in DC motor drives and load management applications.

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Keywords: bridge rectifier, electronic component, electronic component supply, electronic components, electronics component, ics, integrated circuit, obsolete electronic component, obsolete ic, power resistors, power transformer, resistors, semiconductor, solar lights, solar panels, voltage regulators

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