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Part Number: IRFR120 File Name: irfr2605.pdf No. of Pages: 9 File Size: 167.96 KB Download Hits: 3

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Abstract:

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications.

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