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Silicon N Channel MOS Type (?-MOSIV)

Part Number: K3565
Toshiba Semiconductor


Abstract:

Low drain-source ON resistance: RDS (ON) = 2.0? (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


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Other Part Numbers:

2SK3565, K3565



Other Manufacturers:

Shanghai Lunsure Electronic Tech ESWITCH Everlight Electronics Co. Ltd. Kingbright
Summit Microelectronics, Inc. Dialight Data Delay Devices, Inc. BurrBrown
Broadcom Minmax Technology Co. Ltd. Brilliance Semiconductor LSI Computer Systems

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