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Part Number: K3567
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Silicon N Channel MOS Type (?-MOSVI)

Part Number: K3567
Toshiba Semiconductor


Abstract:

Low drain-source ON resistance: RDS (ON) = 1.7? (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


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Other Part Numbers:

2SK3567, K3567



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