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Silicon N Channel MOS Type (?-MOSVI)

Part Number: K3569
Toshiba Semiconductor


Abstract:

Low drain-source ON resistance: RDS (ON) = 0.54? (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


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Other Part Numbers:

2SK3569, K3569



Other Manufacturers:

General Semiconductor Renesas Technology Everlight Electronics Co. Ltd. ATMEL
Taiwan Semiconductor Company Ltd. Excel Semiconductor Inc. Minmax Technology Co. Ltd. Silicon Laboratories
Rectron Semiconductor Power Semiconductors CML Innovative Technologies SEMTECH ELECTRONICS LTD.

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