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Power Amplifier Applications

Part Number: A965
Toshiba Semiconductor


Abstract:

Electrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current ICBO VCB = -120 V, IE = 0 . . -100 nAEmitter cut-off current IEBO VEB = -5 V, IC = 0 . . -100 nACollector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -120 . . VEmitter-base breakdown voltage V (BR) EBO IE = -1 mA, IC = 0 -5 . . VDC current gainhFE(Note)VCE = -5 V, IC = -100 mA 80 . 240Collector-emitter saturation voltage VCE (sat) IC = -500 mA, IB = -50 mA . . -1.0 VBase-emitter voltage VBE VCE = -5 V, IC = -500 mA . . -1.0 VTransition frequency fT VCE = -5 V, IC = -100 mA . 120 . MHzCollector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz . . 40 pF


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Other Part Numbers:

2SA965, A965




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