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FGH20N6S2D / FGP20N6S2D / FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Part Number: FGH20N6S2D
Fairchild Semiconductor


Abstract:

Description Features The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low · 100kHz Operation at 390V, 7A Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs · 200kHZ Operation at 390V, 5A along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten · 600V Switching SOA Capability delay times, and reduce the power requirement of the gate · Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC drive. These devices are ideally suited for high voltage switched mode power supply applications where low · Low Gate Charge . . . . . . . . . 30nC at VGE = 15V conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially · Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical designed for: · UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ · Power Factor Correction (PFC) c


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Other Part Numbers:

20N6S2D, FGB20N6S2D, FGB20N6S2DT, FGH20N6S2D, FGP20N6S2D




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