Part Number: F1B
File Name: F1001.pdf
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F1001 20 Watts 175 Mhz 16 dB RF Power Mosfet Transistor
Part Number: F1B
Abstract:
RF CHARACTERISTICS ( WATTS OUTPUT )20 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PATENTED GOLD METALIZED 20 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, ABSOLUTE MAXIMUM RATINGS (TC = 25 C) o Total Device Junction to Case Thermal Maximum Junction Storage Temperature DC Drain Current Drain to Gate Drai
Other Part Numbers:
F1001, F1B
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