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Abstract:

Each Schottky barrier beam lead Tee consists of two closely matched diodes connected in the classic Tee configuration. The diodes are formed monolithically to assure close matching of electrical characteristics such as capacitance, forward voltage and series resistance. The silicon that originally connected the diodes on the wafer is removed. The beam lead construction assures minimum parasitic capacitance, connecting lead inductance and permits the interconnection of the diodes into Tees at the wafer level.

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