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Part Number: 2SA2013 / 2S... File Name: ENN6307B.pdf No. of Pages: 5 File Size: 41.79 KB Download Hits: 0

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Abstract:

• Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitales miniaturization in end products. • High allowable power dissipation.

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