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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Part Number: TC5816BFT

Abstract:

The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND Flash EEPROM) with spare 64K - 8 bits. The device is organized as 264 byte - 16 pages - 512 blocks. The device has a 264-byte, static register which allows program and read data to be transferred between the register and the memory cell array in 264-byte increments. The Erase operation is implemented in a single block unit (4 Kbytes + 128 bytes: 264 bytes - 16 pages). The TC5816 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

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TC5816BFT

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