Part Number: 100B0R3BW
File Name: MRF7S19170H.pdf
No. of Pages: 13
File Size: 412.95 KB
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MRF7S19170H RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Part Number: 100B0R3BW
Abstract:
100% PAR Tested for Guaranteed Output Power Capability, Characterized with Series Equivalent Large-Signal Impedance Parameters, Internally Matched for Ease of Use, Integrated ESD Protection, Greater Negative Gate-Source Voltage Range for Improved Class C Operation, Designed for Digital Predistortion Error Correction Systems, RoHS Compliant, In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Other Part Numbers:
MRF7S19170H, MRF7S19170HR3, MRF7S19170HR3(HSR3), MRF7S19170HS, MRF7S19170HSR3, 100B1R8BW, 100B8R2CW, 100B101JW, 200B104MW, C5750X5R1H106MT, 100B0R5BW, 100B1R5BW, 100B0R3BW, 100B0R8BW, 516D477M063PS7B, CRCW12061001FKTA, CRCW120610R0FKTA
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