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Part Number: 100B0R3BW File Name: MRF7S18170H.pdf No. of Pages: 15 File Size: 484.82 KB Download Hits: 1

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MRF7S18170H RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Part Number: 100B0R3BW

Abstract:

100% PAR Tested for Guaranteed Output Power Capability, Characterized with Series Equivalent Large-Signal Impedance Parameters, Internally Matched for Ease of Use, Integrated ESD Protection, Greater Negative Gate-Source Voltage Range for Improved Class C Operation, Designed for Digital Predistortion Error Correction Systems, RoHS Compliant, In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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Other Part Numbers:

100B0R2BW, 100B0R3BW, 100B0R8BW, 100B101JW, 100B104JW, 100B4R7BW, 100B5R6BW, 100B6R8BW, 13661471, 232272461003, 232272461009, 600B0R5BW, 600B2R0BW, C5750X5R1H106MT, MRF7S18170H, MRF7S18170HR3, MRF7S18170HSR3

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