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Part Number: M58
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Abstract:

The M58LT128HST/B are 128 Mbit (8 Mbit x 16) non-volatile secure Flash memories. They may be erased electrically at block level and programmed in system on a word-by-word basis using a 1.7 V to 2.0 V VDD supply for the circuitry and a 2.7 V to 3.6 V VDDQ supply for the Input/Output pins. An optional 9 V VPP power supply is provided to accelerate factory programming. The devices feature an asymmetrical block architecture, with an array of 131 blocks, divided into 8 Mbit banks. There are 15 banks each containing 8 main blocks of 64 Kwords, and one parameter bank containing 4 parameter blocks of 16 Kwords and 7 main blocks of 64 Kwords.

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