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Part Number: M58
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M58LT128HST M58LT128HSB 128 Mbit (8 Mb ƒ"16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories

Part Number: M58
STMicroelectronics


Abstract:

The M58LT128HST/B are 128 Mbit (8 Mbit x 16) non-volatile secure Flash memories. They may be erased electrically at block level and programmed in system on a word-by-word basis using a 1.7 V to 2.0 V VDD supply for the circuitry and a 2.7 V to 3.6 V VDDQ supply for the Input/Output pins. An optional 9 V VPP power supply is provided to accelerate factory programming. The devices feature an asymmetrical block architecture, with an array of 131 blocks, divided into 8 Mbit banks. There are 15 banks each containing 8 main blocks of 64 Kwords, and one parameter bank containing 4 parameter blocks of 16 Kwords and 7 main blocks of 64 Kwords.


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Other Part Numbers:

128h, M58, M58LT128HSB, M58LT128HST, M58LT128HST/B



Other Manufacturers:

Sanyo Semicon Device Quantum Research Group Sharp Electrionic Components Isahaya Electronics
Fuji Electric Advanced Semiconductor Renesas Technology THine Electronics, Inc.
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