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Part Number: M58
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M58LT256JST M58LT256JSB 256 Mbit (16 Mb ƒ" 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories

Part Number: M58
STMicroelectronics


Abstract:

The M58LT256JST/B are 256 Mbit (16 Mbit x 16) non-volatile Secure Flash memories. They may be erased electrically at block level and programmed in-system on a word-by-word basis using a 1.7 V to 2.0 V VDD supply for the circuitry and a 2.7 V to 3.6 V VDDQ supply for the input/output pins. An optional 9 V VPP power supply is provided to speed up factory programming. The devices feature an asymmetrical block architecture. The M58LT256JST/B have an array of 259 blocks, and are divided into 16 Mbit banks. There are 16 banks each containing 16 main blocks of 64 Kwords, and one parameter bank containing 4 parameter blocks of 16 kwords and 15 main blocks of 64 kwords.


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Other Part Numbers:

M58, M58LT256JSB, M58LT256JST, M58LT256JST/B



Other Manufacturers:

SiGe Semiconductor, Inc. SemiWell Semiconductor Infineon Technologies AG CMedia Electronics
HANAMICRON Pericom Semiconductor Raltron Electronics Power Integrations, Inc.
Vanguard International Semiconductor Catalyst Semiconductor InnovASIC, Inc Fujitsu Media Devices Limited

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