Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction, majority carrier conduction Built-in strain relief, ideal for automated placement

Schottky Barrier Chip Guard Ring Die Construction forTransient Protection High Current Capability Low Power Loss, High Efficiency ? High Surge Current Capability ? For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

Small mold type. (TSMD5) Low VF, low IR. High reliability.

Small interterminal capacitance (C=0.45pF typ). Low forward voltage and excellent detection efficiency (VF=0.35V max) High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS345- applied sets to be made small and slim.

Guard Ring Die Construction for Transient Protection, Ideally Suited for Automatic Assembly, Low Power Loss, High Efficiency and Surge Overload Rating to 175A Peak

Trench MOS Schottky Technology, Low forward voltage drop, low power losses, High efficiency operation, Low thermal resistance, Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package), Solder Dip 260 °C, 40 seconds (for TO-220AB & TO-262AA package), Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.

Peak Repetitive Reverse Voltage VRRM 40 V .Working Peak Reverse Voltage VRWM 40 V.DC Blocking Voltage VR 40 V.RMS Reverse Voltage VR(RMS) 28 V.Average Rectified Current IO 0.5 A.

Lead free product Leadless chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Plastic package has Underwriters Laboratory Flammability Classification 94V-0