Bipolar
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Three Terminal Positive Voltage Regulators 5 V, 5.7 V, 6 V, 7 V, 8 V, 9 V, 10 V, 12 V, 15 V, 18 V, 20 V, 24 V
Suitable for CMOS, TTL, the power supply of other digital ICs Internal thermal overload protection Internal short circuit current limiting Maximum output current of 1 A Metal fin (tab) is fully covered with mold resin. (T0-220 NIS package)
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm
DescriptionThe STC08DE150HP is manufactured in a hybridstructure, using dedicated high voltage Bipolarand low voltage MOSFET technologies, aimed atproviding the best performance in ESBT topology.The STC08DE150HP is designed for use in aux flyback smps for any three phase application.Applications Single switch SMPS based on three phase mainsInternal schematic diagramsTable 1.General featuresVCS(ON) ICRCS(ON)0.6V8A0.075 TO247-4L HP www.st.comSTC08DE150HP2/11 Contents1Electrical ratings . . . . . .
STC20DE90HP Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 W
The STC20DE90HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HP is designed for use in power supply forward converter and three-phase power factor corrector applications.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 7CH LOW ACTIVE DARLINGTON SINK DRIVER
The TD62304AP/AF and TD62305AP/AF are non?inverting transistor arrays, which are comprised of eight NPN darlington buffer-transistor output stages and PNP input stages. These devices can be operated by source input voltage and are suitable for operations with a 5-V general purposed ogic IC such as 5-V TTL, 5-V CMOS and 5-V Microprocessor which have sink current output drivers. Please observe the thermal condition for using.
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Dual Voltage Comparator
IN the linear mode the input common mode voltage range includes ground. The internally compensated OP amps are in single package. Low power dissipation and power drain suitable for battery operation. Differential input voltage range equal to the
NPN Bipolar Power Transistor 40 Volts 3 Amps SOT223
Features · Collector -Emitter Sustaining Voltage - http://onsemi.com VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc · High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc NPN TRANSISTOR = 100 (Min) @ IC = 3.0 Adc 3.0 AMPERES · Low Collector -Emitter Saturation Voltage - 40 VOLTS, 2.0 WATTS VCE(sat) = 0.150 Vdc (Max) @ IC = 1.0 Adc = 0.300 Vdc (Max) @ IC = 3.0 Adc · SOT-223 Surface Mount Packaging C 2,4 · Epoxy Meets UL 94, V-0 @ 0.125 in · ESD Ratings: Human B
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Point Regulators (Low-Dropout Regulator)
The TAR5SBxx Series is comprised of general-purpose bipolar single-power-supply devices incorporating a control pin which can be used to turn them ON/OFF. Overtemperature and overcurrent protection circuits are built in to the devices' output circuit
Toshiba Bipolar Digital Integrated Circuit Silicon Monolithic 7ch Single Driver: Common Emitter
The TD62502FNG, TD62503FNG and TD62504FNG are comprised of seven or five NPN Transistor Arrays. Applications include relay, hammer, Lamp and display (LED) drivers. This devices are a product for the Pb free(Sn-Ag).
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Three-Terminal Low Dropout Voltage Regulator with Output Current of 1 A
The TA48015F consists of fixed-positive-output, low-dropout regulators with an output current of 1 A (max) that utilize V-PNPtransistors for the output stage. This product responds to the need for low-voltage and low-power dissipation devices for use in consumer electronics and industrial appliances.