Block
DC - 4 GHz Active Bias Gain Block
Sirenza Microdevices' SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-243
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
The HMC478MP86 & HMC478MP86E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 4 GHz. This Micro- P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478MP86 & HMC478MP86E offers 22 dB of gain with a +32 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to
02/2009Figure 1: Block DiagramFInternal Reference
DescriptionFigure 2: Pinout (X - ray op View)BSTXVBATTVRAM234567CEXT8PINNAMEDESCRIPTIONPINNAMEDESCRIPTIONbefore the DC blocking72BS8resistor before the DCblocking capacitor to set the34VBATTConnection5VRAMP6CEXTBypass (VREG)3AW02/2009Sdamage. Functional operation is not implied under these conditions. Eof time may adversely affect reliability.ETable 2: AFigure 3: Eof each pin are recorded. The ratings on each pin degradation. BS TX VBATT VRAMP23456 CEXT78 PARAMETER MIN MAX UNITSVBATT) - +5.5 VRF
M93S66, M93S56 M93S46 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection
This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6.
IOC/IOP 504 Block DiagramFibreChannelStandardsFibr
IOC/IOP 504 Block DiagramFibreChannelStandardsFibr
Dual Output Full Function 2 Phase Synchronous Buck Power Block Integrated Power Semiconductors, PWM Control & Passives
The iP1202 is a fully optimized solution for high current synchronous buck applications requiring up to 15A or 30A.The iP1202 is optimized for 2 phase single output applications, up to 30A or dual output, each up to 15A with interleaved input.
DC-8.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier
The CGB7017-SC is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 8.0 GHz frequency range, Mimix†s broadband, cascadable, gain block amplifiers are ideal solutions for transmit, receive and IF applications.
GMPCR06 SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V
The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
07/2005S24 PackageSOT-89Figure 1: Block DiagramAGB
DESCRIPTIONThe AGB3303 is one of a series of high performanceInGaP HBT amplifiers designed for use inlow distortion. No external matching componentsare needed for insertion into a 50 system. With ahigh output IP3, low noise figure and wide bandoperation, the AGB3303 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3303 requires a single supply voltage, and typicallyconsumes 0.6 Watts of pow
Using the Virtex Block SelectRAM+ Features
The Virtex series provides dedicated blocks of on-chip, true dual-read/write port synchronous RAM, with 4096 memory cells. Each port of the block SelectRAM+ memory can be independently configured as a read/write port, a read port, or a write port, and each port can be configured to a specific data width. The block SelectRAM+ memory offers new capabilities allowing the FPGA designer to simplify designs.