Bond
SEMICELL THYRISTOR SKT Tabl. 12,4 Qu RG bond. Corner gate
High current density due to mesa technology. High surge current. Compatible to thick wire bonding.
Gold Wire Bonding Diode
High Voltage.Low Forward Voltage.
SEMICELL THYRISTOR SKT Tabl. 15,2 Qu ZG bond. Central gate
High current density due to mesa technology. High surge current. Compatible to thick wire bonding.
Gold Wire Bonding Diode
High Voltage and Low Forward Voltage
SEMICELL THYRISTOR SKT Tabl. 18,2 Qu ZG bond. Central gate
High current density due to mesa technology. High surge current. Compatible to thick wire bonding.
Gold Wire Bonding Diode
High Voltage Low Forward Voltage For electronic calculator, etc.
SKT Tabl. 5,6 Qu RG bond. Corner gate
High current density due to mesa technology. High surge current. Compatible to thick wire bonding.
Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging
Skyworks chips are shipped in plastic chip trays containing up to#400 individual devices. The chips may be removed from the tray#and positioned for inspection or bonding using tweezers or a#vacuum pickup.
100-Pin Micro FineLine Ball-Grid Array (MBGA) - Wire Bond All dimensions and tolerances conform to ASME Y14.5M 1994. Control
Altera Corporation DS-100MBGA-2.2 -- August 2007 1 Altera Device Package Information 100-Pin Micro FineLine Ball-Grid Array (MBGA) - Wire Bond All dimensions and tolerances conform to ASME Y14.5M 1994. Controlling dimension is in millimeters. Pin A1 may be indicated by an ID dot, or a special feature, in its proximity on package surface. Package Information Package Outline Dimension Table Description Specification Symbol Millimeters Ordering Code Reference M Min. Nom. Max. Package Acronym M
SEMICELL THYRISTOR SKT Tabl. 7,0 Qu RG bond. Corner gate
High current density due to mesa technology. High surge current. Compatible to thick wire bonding.