CMOS
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Super high speed operation : tPD = 3.6 ns (typ.) @VCC = 5 V Low power dissipation : ICC = 2 ?A (Max.) @ Ta = 25?C High noise immunity : VNIH = VNIH = 28% VCC (Min.) 5.5V tolerant input. Wide operation voltage range : VCC (opr) = 2~5.5 V
CXP921064A CMOS 16-bit Single Chip Microcomputer
The CXP921064A is a CMOS 16-bit microcomputer integrating on a single chip an A/D converter, serial interface, I2C bus interface, timer, real-time pulse generator, clock prescaler, remote control receive circuit, and as well as basic configurations like a 16- bit CPU, ROM, RAM, and I/O port.
3.3 VOLT CMOS CLOCKED FIFO WITH BUS-MATCHING AND BYTE SWAPPING 64 x 36
The IDT72V3613 is a pin and functionally compatible version of the IDT723613, designed to run off a 3.3V supply for exceptionally low-power consumption. This device is a monolithic, high-speed, low-power, CMOS synchronous (clocked) FIFO memory which supports clock frequencies up to 83 MHz and has read-access times as fast as 8 ns. The 64 x 36 dual-port SRAM FIFO buffers data from port A to port B. The FIFO operates in IDT Standard mode and has flags to indicate empty and full conditions, and
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
The TC75S59F/TC75S59FU/TC75S59FE is a CMOS general- purpose single comparator. The device can operate off a single power supply and draws a lower supply current than a conventional bipolar general-purpose comparator. This device†s open-drain output stage can be wire-ORed with those of other open-drain output circuits.
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
The ISSI IS65WV12816ALL/ IS65WV12816BLL are highspeed,2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
April 2008 Rev 31/1212 TS393Micropower dual CMOS v
DescriptionThe TS393 is a micropower CMOS dual voltage comparator with extremely low consumption of 9A typically per comparator (20 times less than the dual bipolar LM393). Similar performance is offered by the dual micropower comparator TS3702 with a push-pull CMOS output.Thus response times remain similar to the LM393.NDIP8(Plastic package)D SO-8(Plastic micropackage)PTSSOP8(Thin shrink small outline package)123 45 678 Inverting Input 2Output 2 Non-inverting Input 2 Output 1Inverting Input 1 N
TOSHIBA CMOS DIGITAL INTEGRATED SILICON MONOLITHIC
The TC74ACT74 is an advanced high speed CMOS D FLIP FLOP fabricated with silicon gate and double layer metal wiring Cmos technology. It achives the igh speed operation similar to equivalent Bipolar Schottky TLL while maintaining the CMOS low power dissipation.
Am29F160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
The Am29F160D is a 16 Mbit, 5.0 Volt-only Flash memory device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.
3.5 GHz Low Power CMOS Divide-by-8 Prescaler For RAD-Hard Applications
The PE9303 is a high performance monolithic CMOS prescaler with a fixed divide ratio of 8. Its operating frequency range is 1.5 GHz to 3.5 GHz.
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
The ?PD46128953-X is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS Mobile Specified RAM featuring synchronous burst read and synchronous burst write function.The ?PD46128953-X realizes high performance with the SDR interface, command and data inputs / outputs are synchronized the rising edge of clock.The ?PD46128953-X is fabricated with advanced CMOS technology using one-transistor memory cell