Darlington
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The BD677, BD677A, BD679, BD679A and BD681 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications
Relevant Keywords:
BD677/A/679/A/681, BD679A, BD678/A/680/A/682, BD681, BD677/A, BD679/A, BD678/A, BD680A, BD677/677A/678/678A, BD679/679A/680/680A, BD678, BD680/A, BD677, BD679, BD682, BD677A, BD680, 679A, BD678A, BD681/682
Related Datasheets:
Zetex - FZT704 Silicon planar medium power Darlington transistor datasheet
FEATURES*2A CONTINUOUS CURRENT*FAST SWITCHING*GUARANTEED h FE SPECIFIED UP TO 2ACOMPLEMENTARY TYPE - FZT 604PART MARKING DETAIL - FZT704ABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO-120VCollector-Emitter VoltageV CEO-100VEmitter-Base VoltageV EBO-10VPeak Pulse CurrentI CM-4AContinuous Collector CurrentIC-1.5APower DissipationPTOT 2WOperating and Storage Temperature Rangetj:tstg-55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETER
Relevant Keywords:
8k6k4k, CD.C.100ms100ms, FZT704CCEB, V(BR)EBO-10V, C-1A, CE-5V*IC-2A, IB-2mA, 2k16k14k12k100, CB-100V, FZT704ABSOLUTE, SOT223, C-10mA, CE-5V*IC-1A, IB-1mA, 229FZT704FZT705, C175, FZT704, IE-100, C-100mA, CE-5V*IC-100mA, FZT705FZT7043, 1995FEATURES*2A, C100, EB-10V, IC-2A, B1000, CE-10VI, FZT705, 10D.C.100ms10ms, C-55, CES-10, IC-10mA
Related Datasheets:
NPN Silicon Epitaxial Planar Darlington Transistor
Characteristics at Tamb=25 OC DC Current Gain at IC=10mA, VCE=5V at IC=100mA, VCE=5V hFE hFE 5000 10,000 - - - - Collector Cutoff Current at VCB=30V ICBO - 0.1 ?A.
Relevant Keywords:
MMBTA13
Related Datasheets:
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC 4CH HIGH?CURRENT DARLINGTON SINK DRIVER
The TD62164BP and TD62164BF are high?voltage, high?current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and stepping moter drivers. Please observe the thermal condition for using.
Relevant Keywords:
TD62164BP/BF, TD62164BP, TD62164BF
Related Datasheets:
Zetex - FMMT634 Silicon power Darlington transistor datasheet
625mW power dissipation,Highest current capability SOT23 Darlington,Very hign hFE specified at 2A (5K minimum),
Relevant Keywords:
SOT23, FMMT634
Related Datasheets:
Dual Darlington Transistor Module 75 Amperes/600 volts
The powerex Dual Darlington Tranisistor Module are high power device designed for use in switching applications.
Relevant Keywords:
KS524575
Related Datasheets:
NPN Darlington transistors
NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.
Relevant Keywords:
BCV49, BCV48, BCV29, BCV28
Related Datasheets:
BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C, 80 W at 25°C Case Temperature, 12 A Continuous Collector Current, Minimum hFE of 750 at 3 V, 5 A.
Relevant Keywords:
BDW94, BDW93C, BDW94C, BDW93B, BDW94B, BDW93A, BDW94A, BDW93
Related Datasheets:
MJE800/801/802/803 NPN Epitaxial Silicon Darlington Transistor
High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC, Complement to MJE700/701/702/703.
Relevant Keywords:
MJE801, MJE800/802, MJE802/803, MJE800/801, MJE802, MJE800, MJE801/803, MJE700/701/702/703
Related Datasheets:
Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode
60V Zener Diode Built-In Between Collector and Base Low Fluctuation in Breakdown Voltages High Energy Handling Capability High Speed Switching
Relevant Keywords:
NTE2336
Related Datasheets:
