Device
TND721MH5 Excellent Power Device IGBT Driver
Buffer type, Monolithic structure (Adoption of CMOS process) and Allows simplified configuration of driver circuit.
Continental Device India LimitedAn ISO/TS 16949, I
DESCRIPTIONSYMBOLCollector -Base VoltageVCBOCollector -Emitter VoltageVCEOEmitter Base Voltage VEBOCollector CurrentICTotal Power Dissipation up to Tc=25 CtotJunction TemperatureTjStorage TemperatureTstgELECTRICAL CHARACTERISTICS (Ta=25 C Unless Specified Otherwise)DESCRIPTIONSYMBOLTEST CONDITIONMINTYPMAXUNITCollector Cut off CurrentICEOVCE=800V, IB=01.0mACollector Cut off CurrentICBOVCB =800V, IE =0100.0mAEmitter Cut off CurrentIVEB =4V, IC =01.0mACollector Emitter VoltageVCEO IC=50mA, IB =0160
Full-speed Universal Serial Bus interface device
The ISP1181 is a Universal Serial Bus (USB) interface device which complies with Universal Serial Bus Speci?cation Rev. 1.1. It provides full-speed USB communication capacity to microcontroller or microprocessor-based systems. The ISP1181 communicates with the system's microcontroller or microprocessor through a high-speed general-purpose parallel interface.The ISP1181 supports fully autonomous, multi-con?gurable Direct Memory Access (DMA) operation. The modular approach to implementing a US
SPICE Device Model SiE818DF N-Channel 75-V (D-S) MOSFET
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Zetex - AN46 - Zetex' current monitors with PolySwitchZ overcurrent device
specification, design, price or conditions of supply of any product or service.EuropeZetex GmbHStreitfeldstrae 19D-81673 MnchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.sales@zetex.comAmericasZetex Inc700 Veterans Memorial HighwayHauppauge, NY 11788USATelephone: (1) 631 360 2222Fax: (1) 631 360 8222usa.sales@zetex.comAsia PacificZetex (Asia Ltd)3701-04 Metroplaza Tower 1Hing Fong Road, Kwai FongHong KongTelephone: (852) 26100 611Fax: (852) 24250 494asia.sales@zetex.comCorp
SPICE Device Model SiSi1913DH Dual P-Channel 20-V (D-S) MOSFET
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Applications and performance of PTN1111 and PTN2111 clock distribution devices
The constantly increasing requirements for high-performance level systems have introduced a demand for high-speed, low skew clock generation and distribution networks. Clocks are used to drive processors or to synchronize the data between system components, and consequently, clock distribution networks have become an important part of the system design. Clock skew, which is defined as the time difference between simultaneous clock transitions within a system, can have as much of an impact on th
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Low ON-resistance, 4V drive.
SPICE Device Model SUM55P06-19L P-Channel 60-V (D-S) 175° MOSFET
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.