VSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package, released for Lead (Pb)-free Reflow Soldering.

Power dissipation, PD: 200 mW (Tamb=25), Collector current, IF: 30 mA, Collector-base voltage, VR: 40 V, Operating and storage junction temperature range, TJ, Tstg: -55 to +150

SILICON EPITAXIAL PLANAR DIODE SWITCHESfor electronic band-switching in radio and TV tuners in thefrequency range of 50 to 1000 MHz. The dynamic forwardresistance is constant and very small over a wide range offrequency and forward current. The reverse capacitance isalso small and largely independent of the reverse voltage.

Absolute Maximum Ratings (Ta = 25 OC), Repetitive Peak Reverse Voltage VRM 80 V, Reverse Voltage VR 80 V, Average Rectified Forward Current (Single) IO 100 mA, Maximum (Peak) Forward Current (Single) IFM 300 mA, Peak Forward Surge Current (tp = 1 µs) IFSM 4 A

High capacitance ratio: C1 V/C4 V = 2.0 (typ.) Low series resistance: rs = 0.28 ? (typ.) Useful for small size tuner.

The OP231W series devices are 890nm gallium aluminium arsenide infrsred emitting diodes mounted in hermetically sealed packages.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Small power mold type, (TUMD2) Low VF High reliability

Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applications. The modules are isolated consisting of six rectifier diodes.