The MGF1451A is designed for use in S to Ku band power amplifiers.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.

DescriptionPhilips General Purpose Automotive (GPA) TrenchMOS technology.1.3Applications1.4Quick reference data2.Pinning informationLow on-state resistancenQ101 compliantn175 CratednIntermediate level compatible.nAutomotive systemsn12V loadsnMotors, lamps and solenoidsnGeneral purpose power switching.nEDS(AL)S 267mJnRDSon=10m W (typ)nID 55AnPtot 102W.1gate (g)SOT428 (D-PAK)2drain (d)mbmounting base;connected todrain (d)Top view 13 mb2sdgMBB076Philips SemiconductorsBUK6213-30ATrenchMOS Intermedia

100V forward blocking voltage,RDS(on) = 8O,

The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 -5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Free from secondary breakdown, Low power drive requirement, Ease of paralleling, Low Ciss and fast switching speeds, Excellent thermal stability, Integral Source-Drain diode, High input impedance and high gain, Complementary N- and P-channel devices

BUK95/9609-55A TrenchMOSTM logic level FET

DC-DC conversion,Solenoids/relay drivers for automotive,Very low RDS(on) = .33O,

The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50? system

1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Smal Surface Mount Package (SOP8).