High Voltage
PMT/UMT(275) Series - Power Gap - High Voltage Gas Tube Surge Protector
High Energy Devices’ PMT(275) and UMT(275) Series surge protectors (350-500V and 550-2500V respectively) provide a high level of protection from high-speed, high-current transient surges. These devices are constructed using a proprietary semiconductor junction process which results in nanosecond response times combined with peak current ratings in excess of 20kA.
Applications include: Test Equipment, Video Displays. Medical Electronics, Instrumentation Circuits, Aircraft Lightning Protection
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Relevant Keywords:
PMT(275)350, PMT(275)400, PMT(275)450, PMT(275)500, PMT-275-350, PMT-275-400, PMT-275-450, PMT-275-500, UFT(266)-1-900, UFT(266)-2-900, UFT266-1-900, UFT266-2-900, UMT(275)1.0, UMT(275)-1.0, UMT(275)1.5, UMT(275)-1.5, UMT(275)2.0, UMT(275)-2.0, UMT(275)2.5, UMT(275)-2.5, UMT(275)550, UMT(275)-550, UMT(275)600, UMT(275)-600, UMT(275)650, UMT(275)-650, UMT(275)750, UMT(275)-750, UMT(275)800, UMT(275)-800, UMT(275)850, UMT(275)-850, UMT(275)900E1, UMT(275)-900-E1, UMT(275)900E2, UMT(275)-900-E2, UMT(279)1.7, UMT(279)-1.7, PMT(275), UMT(275), UFT(266). UMT(279), PMT-275, UFT266, High Voltage Protection, Gas Tube Surge Protector, Transient Surge Protector, Overvoltage Protector, Gas Discharge Tube, Surge Protection, Miniature Protector, Nano-second Response, Signal Line Protector, Power Line Protector, Weapon System Protection, Weapon Missile Transient Protection, Ceramic-metal Transient Protector, Shock and Vibration Resistant Transient Protector
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UBD/UBT/UGT Series - Uni-Imp - High Voltage Ultra Fast Gas Tube Transient Surge Protector
High Energy Devices’ Uni-Imps high-speed transient surge protectors (0.55-20kV) provide the ultimate protection from high-energy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary semiconductor junction process that results in nanosecond response times combined with peak current ratings in the 5-10kA range. A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient.
Relevant Keywords:
UBD(267)3.0, UBD(267)-3.0, UBD(274)1.5, UBD(274)-1.5, UBD(274)2.0, UBD(274)-2.0, UBD(274)3.0, UBD(274)-3.0, UBD(274)550, UBD(274)-550, UBD(278)1.0, UBD(278)-1.0, UBD(278)1.2, UBD(278)-1.2, UBD(278)2.0, UBD(278)-2.0, UBD(278)4.0, UBD(278)-4.0, UBD(278)550, UBD(278)-550, UBD(278)900, UBD(278)-900, UBD(377)2.0, UBD(377)-2.0, UBD1.0, UBD-1.0, UBD1.2, UBD-1.2, UBD1.5, UBD-1.5, UBD2.0, UBD-2.0, UBD2.25-001, UBD-2.25-001, UBD2.5, UBD-2.5, UBD3.0, UBD-3.0, UBD4.0, UBD-4.0, UBD550, UBD-550, UBD600, UBD-600, UBD650, UBD-650, UBD750, UBD-750, UBD850, UBD-850, UBT10.0, UBT-10.0, UBT12.0, UBT-12.0, UBT13.0, UBT-13.0, UBT15.0, UBT-15.0, UBT19.0, UBT-19.0, UBT20.0, UBT-20.0, UBT4.0, UBT-4.0, UBT5.0, UBT-5.0, UBT6.0, UB-T6.0, UBT7.5, UBT-7.5, UGT10.0, UGT-10.0, UGT12.0, UGT-12.0, UGT15.0, UGT-15.0, UGT18.0, UGT-18.0, UGT20.0, UGT-20.0, UGT4.0, UGT-4.0, UGT5.0, UGT-5.0, UGT6.0, UGT-6.0, UGT7.5, UGT-7.5, UBD(267), UBD(274), UBD(278), UBD(377), UBD, UBD2.25, UBD-2.25, UBT, UGT, Uni-Imps, High Voltage Protection, Gas Tube Surge Protector, Transient Surge Protector, Overvoltage Protector, Gas Discharge Tube, Surge Protection, Ultra Fast Surge Protector, EMP Protection, EMP Induced Transients, TWT Protection, Magnetron Protection, Signal Antenna Protection
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MMBTA92LT1 MMBTA93LT1 High Voltage Transistor
Relevant Keywords:
MMBTA93LT1, MMBTA93, MMBTA92LT1, MMBTA92
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Pha. Power Capacitors High Voltage Power Capacitors
In the case of single phase capacitor units with dead casings, both polarities are led out through the casing in an insulated condition by means of porcelain bushings
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Zetex - ZTX560 Silicon planar medium power high voltage transistor datasheet
FEATURESExcellent hFEcharacterisristics up to IC=50mALow Saturation voltagesPARTMARKINGZTX560ABSOLUTE MAXIMUM RATINGSPARAMETERSYMBOLVALUEUNITCollector-basevoltageV CBO-500VCollector-emittervoltageV CEO-500VEmitter-basevoltageV EBO-5VPeakpulsecurrentI CM-500mAContinuouscollectorcurrentI C-150mA tot 1WOperatingandstoragetemperaturerangeT j :T stg-55 to +150CELECTRICAL CHARACTERISTICS (at Tamb= 25C)PARAMETERSYMBOLMIN.MAX.UNITCONDITIONSCollector-basebreakdownboltageV(BR)CBO-500V IC =-100 ACollector-
Relevant Keywords:
C-50mA,V, IC50mA,Low, CES-100nAV, ZTX560, C-50mA,I, IC-50mA,V, CE-20V,I, VVIC-20mA,I, C-50mA, IC-50mA,I, CE-100V,I, T60MHzV, C-150mA, IC-1mA,V, CB-500VV, IC50mALow, B1-5mA,I, EBO-100nAV, ZTX560ISSUE
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NPN Silicon High Voltage Transistors
As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended.
Relevant Keywords:
MMBTA43, MMBTA42
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MMBD1401A / 1403A / 1404A / 1405A High Voltage General Purpose Diode
Relevant Keywords:
MMBD1401A, 1405A1404A, MMBD1405A, 1405A, MMBD1404A, 1404A, MMBD1403A, 1403A
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SCMOS3EE Digital and Mixed- signal 0.5 ?m CMOS with High Voltage and EEPROM Capabilities
Atmel offers customers access to leading-edge specialty technologies to develop cost- effective and high-performance products dedicated to analog, mixed-signal and digital applications. Atmel's Wafer Fab (class 1) in Nantes, France offers state-of-the-art CMOS and BiCMOS technologies which take benefit of a strong experience in statistical methods and manufacturing tools.
Relevant Keywords:
BiCMOS2, 4025B-FOUN-09
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NPN High Voltage Transistors
NPN high-voltage transistor in a SOT89 plastic package.PNP complements: BF621 and BF623
Relevant Keywords:
BF623, BF622, BF621, BF620
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N-CHANNEL ENHANCEMENT HIGH VOLTAGE POWER MOSFETS
StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
Relevant Keywords:
SML50B22
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