Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBT, with outstanding performances.

Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2501~RN2506

Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

High current driving is possible Since bias resisters are built in the transister,the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of anassembly are possible. Many kinds of resistance valueare lined up in order to support various kinds of Circuit design.

Two devices are incorporated into an Extreme super mini (6-pin) .package.Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and save assembly cost.

Fast Trench IGBTs, Robust and soft freewheeling diodes in CAL technology, Highly reliable spring contacts for electrical connections

Enhancement mode type High speed : tf = 0.11 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name)

The LXMG1617-05-4x is a Single Output 4W Direct Drive™ CCFL (Cold Cathode Fluorescent Lamp) Inverter Module specifically designed for driving LCD backlight lamps. It is ideal for driving typical 8.4" to 12.1" TFT panels. LXMG1617 modules provide the designer with a vastly superior display brightness range. This brightness range is achievable with virtually any LCD display. The maximum output current is externally programmable over a range of 5 to 6.5mA in 0.5mA steps to allow t

TECHNICAL DATA IN74AC04 Hex Inverter High-Speed Si

Powerex Intellimod Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.