The STM32F101xx access line family incorporates the high-performance ARM Cortex-M3 32-bit RISC core operating at a 36 MHz frequency, high-speed embedded memories (Flash memory up to 128Kbytes and SRAM up to 16 Kbytes), and an extensive range of enhanced peripherals and I/Os connected to two APB buses. All devices offer standard communication interfaces (two I2Cs, two SPIs, and up to three USARTs), one 12-bit ADC and three general purpose 16-bit timers.

DescriptionThe Block Memory Generator is used to build custom memory modules from block RAM primitives inXilinx FPGAs. The core implements an optimal memory by arranging block RAM primitives based onuser selections, automating the process of primitive instantiation and concatenation. Using the COREGenerator Graphical User Interface (GUI), users can configure the core and rapidly generate a highlyoptimized custom memory solution.Memory TypeThe Block Memory Generator creates five memory types: Sin

The Am29DL640G is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15"DQ0; byte mode data appears on DQ7"DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

The AT17FxxxA Series of In-System Programmable Configuration PROMs (Configu-rators) provide an easy-to-use, cost-effective configuration memory for Field Programmable Gate Arrays. The AT17FxxxA Series device is packaged in the 20-lead PLCC and 32-lead TQFP, see Table 1-1. The AT17FxxxA Series Configurator uses a simple serial-access procedure to configure one or more FPGA devices.

The ST10F269-T3 is a derivative of the STMicroelectronics ST10 family of 16-bit single-chip CMOS microcontrollers. It combines high CPU performance (up to 20 million instructions per second) with high peripheral functionality and enhanced I/O-capabilities. It also provides on-chip high-speed single voltage Flash memory, on-chip high-speed RAM, and clock generation via PLL.

Power supply voltage of 2.7 V to 3.1 V High performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM)

ASI's, AS28F128J3M Enhanced or Mil-Temp variant of Micron's Q-Flash family of devices, is a nonvolatile, electrically blockerasable (FLASH), programmable memory device manufactured using Micron's 0.15um process technology.This device containing 134,217,728 bits organized as either 16,777,218 (x8) or 8,388,608 bytes (x16). The device is uniformly sectored with one hundred and twenty eight 128KB ERASE blocks.

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today™s embedded applications that require highe

The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F400B is fully backward compatible with the M29F400.

DescriptionST32F5122/4 1 Description1.1 Hardware descriptionThe ST32F512 is a serial access microcontroller designed for secure mobile applications that incorporates the most recent generation of ARM processors for embedded systems. Its Cortex-M3 32-bit RISC core operating at a 20-MHz frequency brings great performance and excellent code compacity to the application thanks to the Thumb-2 instruction set. The high-speed embedded Flash 512 Kbyte memory introduces more flexibility to the system. Th