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All features, specifications, and model numbers su
features, specifications, and model numbers subject to change.All on screen images are simulated pictures. Lightweight portable media player Plays audio, video, photo, and games Supported formats: MP3, WMA, MPEG4,Ogg, SVI, JPEG, TXT FM Tuner and recorder DNSe 2.0 sound engine with variable EQ settings 1.8" TFT LCD display Datacasting with Samsung Media Studio Shows album art and wallpaper File browser, mobile playlists Adjustable playback speed Clock display Audio Playback: 25 hours Video P
SPICE Device Model Si7820DN N-Channel 200-V (D-S) MOSFET
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
Drain-S ource Breakdown Voltage BVDS S = VGS 0V, ID 250uA = 30 V Zero Gate Voltage Drain Current IDS S VDS 24V, VGS 0V = = 1 Gate-Body Leakage IGS S VGS 20V, VDS 0V = = 100 nA uA
AC-DC Current Mode PWM Controller
The LM5021 off-line pulse width modulation (PWM) controller contains all of the features needed to implement highly efficient off-line single-ended flyback and forward power converters using current-mode control.
Ledman Optoelectronic Co., Ltd. DATA SHEET Model
Description: 3.52.8mm Top SMD Colloid Color: Yellow Emission Color: White Viewing Angle :120 Dice Material: InGaN ATTENTIONOBSERVE PRECAUTIONSELECTROSTATIC SENSITIVE DEVICES PREPARED BY CHECKED BY APPROVED BY Zhen Feng Shangsheng Zhang Jiandong Huang Add: Building 8,Block 2,Baimang Baiwangxin Industrial Park, Xili Area,Nanshan District,Shenzhen, P.R.China Tel: 86-755-86139688 Fax: 86-755-86139001 Ledman Optoelectronic Co.,Ltd. Page 2 of 4 LQW-017-D REV.01 Model No. LS-AOHB-CSN3-02 DOC No. LSL-14
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
SPICE Device Model Si5404DC N-Channel 2.5-V (G-S) MOSFET
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. Thesaturated output impedance is best fit at the gate bias near the threshold voltage.
AP2426GEY N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
G2305A P-CHANNEL ENHANCEMENT MODE POWER MOSFET
The G2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Zetex - ZVN4206AV N-channel enhancement mode vertical DMOS FET datasheet
ZVN4206AVOutput Characteristics V DS - Drain Sourc Automotive relay drivers,Stepper motor drivers,60 volt VDS,RDS(on) = 1O,Repetitive avalanche rating,No transient protection required,Characterized for 5V logic drive,