Avalanche Rugged Technology, Rugged Gate Oxide Technology, Lower Input Capacitance, Improved Gate charge, Extended Safe Operating Area, Lower Leakage Current: 10 ?A (Max.) @ VDS = 100V, Lower RDS(ON): 0.336? (Typ.)

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain curren

TrenchFETr Power MOSFET, 100% Rg Tested

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company™s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company™s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition™s products.

TrenchFET® Power MOSFET VDS New Low Thermal Resistance Package with Low 1.07 mm Profile 100 % Rg Tested Lead (Pb)-free Version is RoHS Compliant

The VFT300-50 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal applications to 175 MHz.

The GU70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.