DescriptionFeaturesFunctional DiagramThe HMC566 is a high dynamic range GaAs PHEMT MMIC Low Noise Ampli er (LNA) chip which operates from 29 to 36 GHz. The HMC566 provides 20 dB of small signal gain, 2.8 dB of noise gure and output IP3 of 23.5 dBm across the operating band. This self-due to its compact size, slightly positive gain slope, single +3V supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test xture connected via two 0.025 mm (1 mil) diameter bondw

The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50? system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL.

The MIC38300 is a 3A peak, 2.2A continuous output current step down converter and the first device in a new generation of SuperLNR™ providing the benefits of LDOs in respect to ease of use, fast transient performance, high PSRR and low noise while offering the efficiency of a switching regulator.

The PLL500-17 is a low cost, high performance andlow phase noise VCXO for the 17 to 36MHz range,providing less than -130dBc at 10kHz offset at35.328MHz.

Avago's ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/?Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ? 4000µS

The ADR360/ADR361/ADR363/ADR364/ADR365/ADR366 are precision 2.048 V, 2.5 V, 3.0 V, 4.096 V, 5.0 V, and 3.3 V band gap voltage references that offer low power and high precision in tiny footprints. Using patented temperature drift curvature correction techniques from Analog Devices, Inc., the ADR36x references achieve a low temperature drift of 9 ppm/°C in a TSOT package.

The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD2250 is available in die form and in other packages.

The HA-5221/883 is a high performance, dielectrically isolated, monolithic op amp, featuring precision DC characteristics while providing excellent AC characteristics. Designed for audio, video, and other demanding applications, noise (3.6nV/?Hz at 1kHz typ), total harmonic distortion (<0.005% typ), and DC errors are kept to a minimum.

DESCRIPTIONThe LTC 1067/LTC1067-50 consist of two identical rail-to-rail, high accuracy and very wide dynamic range 2ndorder switched-capacitor building blocks. Each buildingblock, together with three to five resistors, provides 2ndorder filter functions such as bandpass, highpass, lowpass,notch and allpass. High precision 4th order filters areeasily designed.The center frequency of each 2nd order section is tuned bythe external clock frequency. The internal clock-to-centerfrequency ratio (100:1