The 110 °C rated SFH1617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package.

The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The H11A617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

The HCPL-181 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin mini-flat SMD package with a 2.0 mm profile. The small dimension of this product allows significant space saving. The package volume is 30% smaller than that of conventional DIP type. Input-output isolation voltage is 3750 Vrms. Response time, tr, is typically 4 µs and minimum CTR is 50% at input current of 5 mA.

The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse s haping. The detector circuit is optimized for simplicity of operation and utilizes an open collector output for maximum application flexibility.

An optocoupler provides insulation safety, electrical noise isolation, and signal transfer between its input and output. The insulation and noise rejection characteristics of the optocoupler are provided by the mechanical package design and insulating materials.

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

The TCLT1600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in an SOP6 4-pin wide body package.

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

The HCPL-2200/2219 are optically coupled logic gates that combine a GaAsP LED and an integrated high gain photo detector.

The HCPL-3700 voltage/current threshold detection optocoupler consists of an AlGaAs LED connected to a threshold sensing input buffer IC which are optically coupled to a high gain darlington output. The input buffer chip is capable of controlling threshold levels over a wide range of input voltages with a single resistor. The output is TTL and CMOS compatible.