Power
High Current Surface Mount Power Inductors
A high saturation ferrite bobbin core allows for excellent size to Direct Current handling ratio. The base is a molded thermoset epoxy material with side wall extensions that provide protection to the ferrite core.
Relevant Keywords:
5142-123K, 5142-825K, 5142R-565K, 5142-223K, 5142R-153K, 5142-393K, 5142R-273K, 5142-683K, 5142R-473K, 5142-154K, 5142R-105K, 5142R-823K, 5142-274K, 5142R-184K, 5142-474K, 5142R-334K, 5142-106K, 5142-824K, 5142R-564K, 5142-185K, 5142R-125K, 5142-335K, 5142R-225K, 5142-565K, 5142R-395K, 5142-153K, 5142R-104K, 5142R-685K, 5142-273K, 5142R-183K, 5142-473K, 5142R-333K, 5142-105K, 5142-823K, 5142R-563K, 5142-184K, 5142R-124K, 5142-334K, 5142R-224K, 5142-564K, 5142R-394K, 5142-125K, 5142R-103K, 5142R-684K, 5142-225K, 5142R-155K, 5142-395K, 5142R-275K, 5142-104K, 5142-685K, 5142R-475K, 5142-183K, 5142R-123K, 5142R-825K, 5142-333K, 5142R-223K, 5142-563K, 5142R-393K, 5142-124K, 5142R, 5142R-683K, 5142-224K, 5142R-154K, 5142-394K, 5142R-274K, 5142-103K, 5142-684K, 5142R-474K, 5142-155K, 5142R-106K, 5142R-824K, 5142-275K, 5142R-185K, 5142-475K, 5142R-335K
Related Datasheets:
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
30 Volt VCEO. 1 Amp continuous current. Ptot= 1 Watt.
Relevant Keywords:
ZTX549A, ZTX549
Related Datasheets:
N-channel 650 V, 0.019 Ω, 93 A, MDmesh™ V Power MOSFET Max247
DescriptionMDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the well known resulting product has an extremely low on-resistance, unmatched among silicon-based Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies.Figure 1.Internal schematic diagram Type V DSS @TjMAX R DS(on) maxIDSTY112N65M5710 V< 0.022 93 A123Max247Table 1.Device summaryOrder codesMarking
Relevant Keywords:
AM01471v1ViPwVDIDD.U.T, SBG25AABBRGG, AM01468v1GSPWVDRGRLD.U.T, Max247, 50V)TBDmJdv/dt(2)2.I, C59AIDM, 30P025QMax247, VGAM01470v1DD.U.T, C450WI, 30e5, TC125
Related Datasheets:
Advanced Power N-CHANNEL ENHANCEMENT MODE Electro
DescriptionAbsolute Maximum RatingsSymbolUnitsVDSVVGSVID@TC=25AID@TC=100AIDMAPD@TC=25W W/TSTGTJSymbolValueUnitsRthj-cMaximum Thermal Resistance, Junction-case4.0/WRthj-a62.5/WRthj-aMaximum Thermal Resistance, Junction-ambient110/WData & specifications subject to change without noticeAP9965GEH/JDrain-Source Voltage40Gate-Source Voltage+16Continuous Drain Current270.25Storage Temperature RangeOperating Junction Temperature RangeContinuous Drain Current17Pulsed Drain Current180-55 to 150-55 to
Relevant Keywords:
S10V, N-CHANNEL, VDS30V10010001591317212529, ID18AVDS20V, VDS25V, ID18A, TCtT481216048121620QG, AP9965GEJ
Related Datasheets:
STPS2530C LOW DROP POWER SCHOTTKY RECTIFIER
Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in D2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications.
Relevant Keywords:
STPS2530CG-TR, STPS2530CG, STPS2530C
Related Datasheets:
N-Channel Power Mosfet
Rugged Construction with poly silicon Gate. Low RDS (on) and high transconductance. Excellent high temperature stabilty. Very recovery and superior dv/dt performance.
Relevant Keywords:
SFF9130Z, SFF9130M
Related Datasheets:
4721-4726 Power Transformers International
Six sizes: 1.1VA, 2.4VA, 6VA, 12VA, 20VA & 36VA ratings, Split bobbins for increased dielectric strength, 115/230 volts, 47/63 Hz primary windings, CSA listed (LR 47366) and U.L. recognized (E100878).
Relevant Keywords:
4721-12, 4722-14, 4722-05, 4723-06, 4721-10, 4722-12, 4721-24, 4723-05, 4721-08, 4722-10, 4723-12, 4721-18, 4722-24, 4721-06, 4722-08, 4723-10, 4721-14, 4722-18, 4721-05, 4722-06, 4723-08
Related Datasheets:
Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection
Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish/RoHS Compliant (Note 4)
Relevant Keywords:
DS30891, B360A, B320A
Related Datasheets:
Silicon NPN Transistor RF Power Amp, Driver
The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large-signal power amplifier applications required in commercial and industrial equipment to 300MHz.
Relevant Keywords:
NTE351
Related Datasheets:
DirectFET Power MOSFET
The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve thelowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and process
Relevant Keywords:
IRF6636TR1, IRF6636
Related Datasheets:
