Silicon
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
The TC74HC123A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. There are two trigger inputs, A input (Negative edge), and B input (Positive edge). These inputs are valid for a slow rise/fall time signal (tr=tf=1sec.) as they are schmitt trigger inputs. This device may also be triggered by using CLR input (Positive edge).
Plastic Medium Power Silicon NPN Transistor
Features 2.0 AMPERES · DC Current Gain - POWER TRANSISTORS hFE = 40 (Min) @ IC = 0.15 Adc · Epoxy Meets UL 94 V0 @ 0.125 in 25 WATTS · ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V · Pb-Free Packages are Available* TO-225 CASE 77 STYLE 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ&I
PNP Silicon Epitaxial Planar Transistor
PNP Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
KSC388 NPN Epitaxial Silicon Transistor
GPE= 33dB (TYP) at f=45MHz, Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base).
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 12 V Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
Zetex - ZTX457 Silicon planar medium power high voltage transistor datasheet
VCEO 300V,0.5A continuous current,Ptot=1 Watt,
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 500MHz SINGLE ENDED
SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. Very LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.
TOSHIBA Fast Recovery Diode Silicon Diffused Type
Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V Reverse Recovery Time: trr = 5 to 20 µs Plastic Mold Type.
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OCTAL BUS BUFFER WITH TTL INPUT LEVEL
The TC74HCT540A / TC74HCT541A are high speed CMOS OCTAL BUS BUFFERS fabricated with silicon gate C2MOS technology.These devices may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage levels.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process