Speed
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications
Extremely small surface mounting type. Low IR. (IR=0.1uA Typ.) High reliability.
High SpeedI/O &Cable Assemblies Overview2HSIO prod
Features & BenefitsFeaturesUse of AirMaxVS TechnologyAir as dielectric;NO interleaving shields;Plug in compatible with all license suppliers of Airmax 12 contacts per terminal blockStackable at 2 mm column pitchSupports common wire sizesBenefitsProvides flexibility in design (terminal block count & pitch);Can be configured differential (4 pairs per column) and/ or single endedAvailable today through FCI / Gore25HSIO product presentationwww.fci.com/highspeedioHigh Speed I/O ConnectionsEye
FIN1531 5V LVDS 4-Bit High Speed Differential Driver
This quad driver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signal levels to LVDS levels with a typical differential output swing of 350mV which provides low EMI at ultra low power dissipation even at high frequencies. This device is ideal for high speed transfer of clock and data.
2:1 High Speed Video Multiplexer
The LMH™6570 is a high performance analog multiplexer optimized for professional grade video and other high fidelity high bandwidth analog applications. The output amplifier selects one of two buffered input signals based on the state of the SEL pin. The LMH6570 provides a 400 MHz bandwidth at 2 VPP output signal levels. Multimedia and high definition television (HDTV) applications can benefit from the LMH6570's 0.1 dB bandwidth of 150 MHz and its 2200 V/µs slew rate.
B45035D336*+207 Tantalum Chip Capacitors SpeedPower ll, Low ESR
Wide variety of low ESR values High ripple current capability High volumetric efficiency Excellent solderability Stable temperature and frequency characteristics Low leakage current, low dissipation factor Low self-inductance High resistance to shock and vibration Suitable for use without series resistor (recommended operating conditions see www.epcos.com/tantalum_gti, section 4.4) Lead-free and material content compatible with RoHS
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Multi-base for efficient energy distribution across the chip resulting in significantlyimproved switching and energy ratingsacross full temperature range. Ion implant and high accuracy masking fortight control of characteristics from batch to batch.Triple Guard Rings for improved control of high voltages.
CAT93HC46 1-kb High Speed Microwire Serial EEPROM
The CAT93HC46 is a 1-kb Serial EEPROM memory device which is configured as registers of either 16 bits (ORG pin at VCC) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93HC46 is manufactured using Catalyst's advanced CMOS EEPROM floating gate technology.
M95040 M95020 M95010 4 Kbit, 2 Kbit and 1 Kbit Serial SPI bus EEPROM with high speed Clock
The M95040 is a 4 Kbit (512 x 8) electrically erasable programmable memory (EEPROM), accessed by a high speed SPI-compatible bus. The other members of the family (M95020 and M95010) are identical, though proportionally smaller (2 and 1 Kbit, respectively).
5 AMP 200 Volts HIGH SPEED NPN Transistor
Radiation Tolerant,Fast Switching,High Frequency, 50 MHz Typical,BVCEO 150 Volts Min,High Linear Gain
B45006B226*+507 Tantalum Chip Capacitors, SpeedPower ll, Low ESR
Wide variety of low ESR values, High ripple current capability, High volumetric efficiency, Excellent solderability, Stable temperature and frequency characteristics, Low leakage current, low dissipation factor, Low self-inductance, High resistance to shock and vibration, Suitable for use without series resistor (recommended operating conditions see www.epcos.com/tantalum_gti, section 4.4), Lead-free and material content compatible with RoHS.