Switch
HIGH POWER SWITCHING USE
IC.200A VCES.600VInsulated Type 2-elements in a pack
SP6T UltraCMOS™ 2.6 V Switch 100 - 3000 MHz
The PE4268 SP6T RF UltraCMOS™ Switch addresses the specific design needs of the Quad-Band GSM Handset Antenna Switch Module Market. Broadband performance also makes it a versatile solution in other IF and RF applications.
LT1070/LT1071 - 5A and 2.5A High Efficiency Switching Regulators
DESCRIPTIONCOMMENTSLT1074/LT1076High Voltage Switching Regulators40V Input (60V for HV Versions), 100kHz, 5A and 2A LT1172LT1370/LT1371500kHz High Efficiency Switching Regulators35V, 6A/3A Internal SwitchLT1374/LT1376100kHz High Efficiency Switching Regulators25V Input, 4.5A/1.5A Internal SwitchLT17651.25MHz, 3A, Step-Down Regulator25V Input, TSSOP-16E, SO8 PackageForward ConverterTotally Isolated Converter1070/71 TA07 R41.5k5k500 WN = 0.875 = 7:8FOR V OUT = 15V*REQUIRED IF INPUT LEADS 2"R2
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Two devices are incorporated into a Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
Si3865BDV Load Switch with Level-Shift
The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP- package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n- hannel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865BDV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.9 A.
High-Current Switching Applications
Low collector-to-emitter saturation voltage. Large current capacity. Micaless package facilitating easy mounting.
PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications.
PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended.
Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)
The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high-speed inverters, converters, and other general high-current switching applications.
VersaRupter Load-Break Switch Price and Order Entry Guide
Featurescontactors.Welding isolationContactors1Welding contactors1.122Low Voltage Products & Systems $ 825 1,6351,8151,8754,425140A - 600A3-Pole, A.C.2-Pole, A.C.$ 1,5001,6751,750Coil voltage selectionCoil voltage selection - A contactorsAuxiliary contact blocks Coil voltage selection Volts Coil voltage selection chart1 2Vertical connection bars between 2 pole contactor and MCCB $ 5560 Discount schedule AEA [OC] Discount schedule ABA [OF]1Welding contactorsLow Voltage Products & SystemsF
High Power Switching Applications
The Collector is Isolated from Case. 2 Power Transistors and 2 free Wheeling. Diodes are Built-In to 1 package. High DC Current Gain.