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SP6T UltraCMOS™ 2.6 V Switch 100 - 3000 MHz

The PE4268 SP6T RF UltraCMOS™ Switch addresses the specific design needs of the Quad-Band GSM Handset Antenna Switch Module Market. Broadband performance also makes it a versatile solution in other IF and RF applications.

Relevant Keywords: 
PE4268G-20QFN, PE4268-EK, PE4268-20QFN, PE4268

LT1070/LT1071 - 5A and 2.5A High Efficiency Switching Regulators

DESCRIPTIONCOMMENTSLT1074/LT1076High Voltage Switching Regulators40V Input (60V for HV Versions), 100kHz, 5A and 2A LT1172LT1370/LT1371500kHz High Efficiency Switching Regulators35V, 6A/3A Internal SwitchLT1374/LT1376100kHz High Efficiency Switching Regulators25V Input, 4.5A/1.5A Internal SwitchLT17651.25MHz, 3A, Step-Down Regulator25V Input, TSSOP-16E, SO8 PackageForward ConverterTotally Isolated Converter1070/71 TA07 R41.5k5k500 WN = 0.875 = 7:8FOR V OUT = 15V*REQUIRED IF INPUT LEADS 2"R2

Relevant Keywords: 
10mA90, CURRENTS.C1, LT1070C, REF350750nAl1100nA, 2V1070/71, DRIVER16V5A, LT1071, TA101L1N, 7D123846VC5, INLT1070GNDFBV, LT1172LT1370/LT1371500kHz, TO-3, C5*100, LT107, R1*R2**1070/71, 25mA300044006000, D11N, LT1070HV, TA05VOUT12V2AVIN, 5V10AD1T11NR5, G124020010204012014016060, LT1071HV, TA16, C1500, L110, OUTLT1070/LT1071OPERATIO, VIEW4321, 10mA150300650, CLT1070/LT1071, LT1070/LT1071VCGNDD1VXR1500WR2, R6R1*T11NLT1070/LT1071GNDVCFB, 2R4680W1W1070/71, D2D1, LT1070HVMKLT1070IKLT1070MK, TA09VIN10V, 6A/3A, IN1k5k, LT1071HVMKLT1071MK, TO-220VINVSWGNDFBVCFRONT, C4500, LESS167911131560J, Q1C3C4, 1N914, CYCLE50, LT1070GNDOPTIONAL, TA04, 470W1W, G101*235, LT1071CT, TA15, AN19, L1**200mHSWVCVIN, OUT1070/71, VFN0VVINCLAMP, 10LT1070/LT1071, CFBVIN20V, LT1070/LT1071GND, R3R6330, 2R2SECONDARY, D2C1, LT1070HVITLT1070IT, TA08*REQUIRED, 65VLT1070HV/LT1071HV, G20VFB, LT1071HVITLT1071ITT, TO-220, C4*470, L210, PLANEK4(TO-3), VSWVCVINLT1070, 12V2A, CYCLE10, LT1070CT, TA03, 470W1070/71, G0292, LT1071CK, TA13, 92113C21000mFC4*100

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Two devices are incorporated into a Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.

Relevant Keywords: 
RN2907FE~2909FE, RN2907FE~, RN2909FE, RN2907FE, RN2908FE, RN1909FE, RN2907FE~RN2909FE, RN1907FE
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Si3865BDV Load Switch with Level-Shift

The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP- package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n- hannel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865BDV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.9 A.

Relevant Keywords: 
Si3865BDV

VersaRupter Load-Break Switch Price and Order Entry Guide

Featurescontactors.Welding isolationContactors1Welding contactors1.122Low Voltage Products & Systems $ 825 1,6351,8151,8754,425140A - 600A3-Pole, A.C.2-Pole, A.C.$ 1,5001,6751,750Coil voltage selectionCoil voltage selection - A contactorsAuxiliary contact blocks Coil voltage selection Volts Coil voltage selection chart1 2Vertical connection bars between 2 pole contactor and MCCB $ 5560 Discount schedule AEA [OC] Discount schedule ABA [OF]1Welding contactorsLow Voltage Products & SystemsF

Relevant Keywords: 
LV023-09, A260W, A185WA110WA210W

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