Transistor
Dual Darlington Transistor Module 200 Amperes/600 volts
The powerex Dual Darlington Tranisistor Module are high power device designed for use in switching applications.
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Multi-base for efficient energy distribution across the chip resulting in significantlyimproved switching and energy ratingsacross full temperature range. Ion implant and high accuracy masking fortight control of characteristics from batch to batch.Triple Guard Rings for improved control of high voltages.
PNP Silicon Epitaxial Planar Transistor
PNP Silicon Epitaxial Planar Transistor Low-frequency Transistor (-80V, -0.5A) The transistor is subdivided into two groups Q and R, according to its DC current gain.
DTC143EKA Digital transistors (built-in resistors)
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Only the on/ off conditions need to be set for operation, making device design easy.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
NPN Silicon Power Transistor
Features POWER TRANSISTOR · High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES · Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS · High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc · Epoxy Meets UL 94 V-0 @ 0.125 in 4 · ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V 1 2 · Pb-Free Package is Available 3 ÎÎÎÎÎÎÎÎÎÎÎÎÎ&Icir
NPN video transistors
NPN video transistors, BFQ262; BFQ262A,BFQ262 BFQ262A
PEMB24; PUMB24; PNP/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process