Ultrafast with Soft Recovery : < 35ns (@IF = 6A), High Reverse Voltage : VRRM = 200V, Enhanced Avalanche Energy Rated, Planar Construction

GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Superfast recovery time for high efficiency Low forward voltage , high current capability Low leakage current

The STTH2L06 is using ST Turbo 2 600V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits.Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection.

Diffused Junction. Low Forward Voltage Drop. High Current Capability. High Reliability. High Surge Current Capability

Glass passivated chip junction, Ideal for automated placement, Ultrafast reverse recovery time, Low switching losses, high efficiency, High forward surge capability.

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V. Combines low conduction losses with high switching speed. Tighter parameter distribution and higher efficiency than previous generations. IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes.

International Rectifier's 300V series are the state of the art Ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and Ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM

DescriptionThe STTH8006, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Thanks to its low VF characteristics, this device exhibits high performances in free-wheeling applications.Order Code IF(AV)80 AVRRM600 VTj175 CV F (typ)1.02 Vt rr (max)70 nsPart numberMarkingSTTH8006WSTTH8006W KADO-247STTH8006WTable 1.Absolute ratings (limiting values, at T amb = 25 C, u

The RUR1S1560S is an ultrafast diode (trr < 55ns) with soft recovery characteristics. It has low forward voltage drop and is of silicon nitride passivated ion-implanted, epitaxial planar construction.