The SMV1231-SMV1237 series of silicon hyperabrupt junction varactor diodes is designed for use in VCOs with low tuning voltage operation. The low resistance of these varactors makes them appropriate for high Q resonators in wireless system VCOs to frequencies beyond 2.5 GHz. The SMV1231-SMV1237 series is fully characterized for capacitance and resistance over temperature. SPICE model is provided.

The AT6017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship Closley Approximates Square Law (n = 0.5).

Description 2 Absolute Maximum RatingsCAUTION: Although these devices are designed to be robust, ESD (Electrostatic Discharge) can cause permanent damage. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. T3 Electrical SpecificationsT = 25 C, unless otherwise noted rsVoltrsVolt2. rsVolt2.2.Typical Performance Data (0, +3 V)SMV1206SMV1405SMV2019Ty

The 1N4387 is a High Power Silicon Multiplier Varactor Diode.

M/A-COM's MA4ST1103-1141T is a highly repeatable, ion-implanted, hyperabrupt silicon tuning varactor in a cost effective surface mount package. This varactor is designed for a higher capacitance ratio, a higher tuning voltage, with a respectable Q value for wider band VCO applications.

The SVC252 is a varactor diode designed for use in AFC and CB PLL's VCO. High Q. High capacitance ratio. Compact packaging supports more compact and slimmer SVC252-applied set designs.

The ASI S3028 is a Designed for use in general purpose filter and oscillator applications.Blue Cathode dot Hermetic sealed Package

A 22-VOLT LOW CAPACITANCE HYPERABRUPT VARACTOR DIODE IN A 2 LEAD CERAMIC J PACKAGE

The DKV6534B is designed for UHF Filter and Oscillator Applications that Require Octave tuning.

The SMV2022 and SMV2023 devices are silicon hyperabrupt junction varactor diodes. The specified high capacitance ratio and low RS of these varactors make them attractive for low phase noise VCOs in wireless systems.