The ALD4702 is a quad monolithic precision CMOS rail-to-rail operational amplifier intended for a broad range of analog applications using ±2.5V to ±6V dual power supply systems, as well as +4V to +12V battery operated systems. All device characteristics are specified for +5V single supply or ±2.5V dual supply systems. Total supply current for four operational amplifiers is 6mA maximum at 5V supply voltage. It is manufactured with Advanced Linear Devices' enhanced ACMOS

Basic voltage level translator utilizes a voltage comparator to translate an input voltage range into an output voltage range. First step is to determine the input voltage range, which involves an input low voltage level VIN(low) and an input high voltage level, VIN(high). Next step is to figure out the proper reference voltage level, at VREF. In many cases VREF can be simply midpoint between VIN(low) and VIN(high). In other cases, one may want to skew the VREF voltage level towards either VIN(l

The ALD2722E/ALD2722 is a dual monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD2722E/ALD2722 is a dual version of the ALD1722E/ALD1722 operational amplifier. Each ALD2722E/ALD2722 operational amplifier features individual, user-programmable offset voltage trimming resulting in significantly enhanced total system performance and user flexibility. EPAD technology is

This is an ultra low-voltage LC (Colpitts) oscillator circuit using EPAD MOSFETs with active load and output buffer. This circuit is similar to a standard LC oscillator circuit used to power 5V circuits. However, at low operating voltages, the values of the resistors and the impedance of the inverter MOSFET are selected to optimize oscillation stability and at the same time minimize power consumption. An active load device using, for example, an ALD114804 replaces a passive load at the inverter.

ALD110814/ALD110914 are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD™s proven EPAD® CMOS technology.These devices are intended for low voltage, small signal applications.

This circuit shows an EPAD? MOSFET inverter circuit connected as a voltage controlled resistor circuit. The drain terminal is the output and the gate terminal is the input, which is connected to a voltage reference. The output voltage VO is determined by the reference input voltage and the output loading R. The drain to source voltage and the drain current Ids forms one leg of a resistor divider, and the resistor R forms the other leg of the resistor divider. Depending on the value of R selected

This window comparator has 2 limits, a lower limit and an upper limit, which can produce up to 2 separate outputs, each dedicated to a warning and/or an alarm condition. Each of the V1 and V2outputs is a separate independent signal, which is used to drive a power MOSFET. Note that this circuit works well with push-pull types of voltage comparator output. An output resistor may be added from the output of the comparator to V+ to boost the pull-up current necessary to speed up the turning-on or tu

A simple voltage source follower can be implemented with an EPAD MOSFET connected as a source follower where the output currents are supplied by drain to source current. This circuit is analogous to the classic emitter follower using a bipolar transistor. In this case the input (source) voltage and its source impedance are completely isolated from the output voltage and output currents due to the extremely high input impedance of the MOSFET. The impedance transformed VOUT and IOUT are dependent