The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog switches specifically designed for low voltage, high speed applications where 0.2pC charge injection, 200pf sampling capacitor, and picoamp leakage current are important analog switch operating characteristics. These analog switches feature fast switching, low on-resistance and micropower consumption.

This circuit charges and discharges sampling capacitor Cs by alternately switching it between input VIN and the inverting terminal of the operational amplifier configured as an integrator. Frequency input is provided by digital inputs VA and VB, which are out-of-phase non-overlapping digital clocks. Initially Cs is charged by VIN, which is connected to Cs through the analog switch and enabled by VA(CLOSED). Next, VIN is disconnected from Cs when VA disables (open) the analog switch. VB then ena

The ALD2321A/ ALD2321B/ ALD2321 is a monolithic Precision Dual Voltage Comparator, each having integrated dual complementary output drivers. It is constructed using advanced silicon gate CMOS technology. Key features of the ALD2321A/ ALD2321B/ ALD2321 include very high input impedance, very low offset voltage utilizing onchip e-trim (EPAD® electronic-trimming) technology, flexible multiple output configurations and fast response time with small overdrive voltage. It is designed for ultra low

The matched pair EPAD MOSFET Array provides two separate, matched outputs at DN1 and DN2. Each output could be biased to provide the same type of output characteristics. For example, both outputs can be designed to provide the same matched, temperature coefficient. Or, one output DN1 can be biased to give a different temperature coefficient from DN2. In this circuit, the two outputs DN1 and DN2 has been buffered by an operational amplifier. The two outputs are then summed through a summing ampl

ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD™s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. They are versatile circuit elements useful as design components

The ALD1702/ALD1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power supply and ±5V dual power supply systems as well as +4V to +12V battery operated systems. All device characteristics are specified for +5V single supply or ±2.5V dual supply systems. It is manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.

This current source can be built within a single IC package. The high input gate impedance of Q1 and Q2 eliminates any gate leakage current considerations in most cases, resulting in equal gate voltages of Q1 and Q2. Substantially all of the ISET current becomes the drain current of Q1. Drain current of Q2 is mirrored to that of drain current of Q3. Again, very low gate leakage currents of Q3 and Q4 assures that gate voltages of Q3 and Q4 are equal. When drain voltage of Q4 is at drain voltage o

EPAD ( Electrically Programmable Analog Device ) is a versatile circuit element which contains MOSFET transistors whose threshold voltage can be electrically programmed. EPADs can be programmed individually or in differential pairs where one channel activates a certain condition while the other activates its corollary, thus providing bi-directional control capability. Programming is accomplished by externally injecting electrical charges into the floating gate substrate. The injected char

This is a basic time delay generator using voltage comparators. This example uses a quad voltage comparator. The first input stage produces an RC time delay. In this example, this time delay is determined by R=50K+RT and C= CT. When the voltage of this RC network charges past threshold voltages set by resistor network RF1, RF2, RF3, RF4, each of the voltage comparator is triggered on in a sequence, depending on the respective voltage set at the negative input terminals of each voltage comparator