The ASI FH2164 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz.

The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.High burnout resistance Low noise figure Hermetically sealed package Matched pairs available by adding suffix œM or œMR for matched forward and reverse

The ASI MRAL1720-5 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz.Diffused Ballast Resistors. Internal Matching Network Omnigold Metalization System

The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz.

The ASI MRF553 is designed for Low power amplifier applications. 12.5 V, 175 MHz. POUT = 1.5 W GP = 11.5 min. ? = 60 % (Typ)

The ASI TVU014 is a gold metallized RF power transistor designed for Class-A, UHF and band IV and V TV transmitter applications. It utilizes emitter ballasting for high reliability and ruggedness.

The ASI 2223-4 is Designed for General Purpose Clacc C Applications up to 2.3 GHz.Internal Input/Output Matching Networks PG = 8.0 dB at 4.0 W/2.3 GHz Omnigold Metalization System

The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz.

The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. Common Emitter PG = 10 dB at 25 W/175 MHz Omnigold Metalization System

The ASI BLF368 is a Dual Common Source N-Channel Enhancement- Mode VDMOS. designed for RF Applications.