The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.PG = 5 dB min. at 10 W/ 2,000 MHz Hermetic Microstrip Package Omnigold Metalization System

The ASI UML15 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment.Class C Operation PG = 10 dB at 15 W/400 MHz Omnigold Metalization System

The ASI MV1404H is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode, With Hi-Rel Screening.

The 1N4388 is a High Power Silicon Multiplier Varactor Diode.

The ASI BLF522 is Designed for communications transmitter applications in the UHF frequency range.Designed for broadband operation. High power gain Omnigold Metalization System

The ASI 5082-3140 is a Silicon NIP Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz.

The ASI CD6105A is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment.PG = 7.8 dB Typical at 400 MHz Economical .280 Stud Package Omnigold Metalization System

The ASI MLN1037S is Designed for Class A Linear Applications up to 1.0 GHz.Class A Operation PG = 8.0 dB at 5.0 W/1.0 GHz Omnigold Metalization System

VARACTOR MULTIPLIER DIODES generally exhibit a larger capaictance variation between zero volts and minus six volts reverse bias.SRD have relatively little capiactance change under reverse bias and are used for higher efficiancy applications.These diodes do not require idler circuits to enhance efficiancy.

The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PG = 14 dB Typical at 220 W/30 MHz IMD3 = -32 dBc Typ. at 220 W(PEP) Omnigold Metalization System