Advanced Semiconductor
ASAT25 NPN SILICON RF POWER TRANSISTOR
The ASI ASAT25 is Designed for General Purpose Class Operations up to 1.7 GHz.Internal Input/Output Matching Network PG = 9.0 dB at 25 W/1.7 GHz Omnigold Metalization System
MSC81035M NPN SILICON RF POWER TRANSISTOR
The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications.
B25-28 NPN SILICON RF POWER TRANSISTOR
The B25-28 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz.PG = 10 dB Typical at 25 W/175 MHz ? Load VSWR at Rated Conditions Omnigold Metallization System
CBSL100 NPN SILICON RF POWER TRANSISTOR
The ASI CBSL100 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz.Internal Input/Output Matching Network PG = 9.0 dB at 100 W/ 960 MHz Omnigold Metalization System
TP2314 NPN SILICON HIGH REQUENCY TRANSISTOR
The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case.
MA4853M MEDIUM BARRIER SCHOTTKY MATCHED PAIR DIODE
The ASI MA4853M is a Silicon Schottky Mixer Matched pair Diode. Designed for use in Stripline and coaxial mixers and upconverters High Reliability Low Noise Figure.
ULBM5SL NPN SILICON RF POWER TRANSISTOR
The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. Common Emitter PG = 8.5 dB at 5.0 W/470 MHz Omnigold Metalization System
2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz.POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System
MRF377 NPN SILICON RF POWER TRANSISTOR
The ASI MRF377 is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment.
AP2000A-00 SILICON PIN DIODE CHIP
The AP2000A-00 is a Planar Silicon PIN Diode Chip Designed for Medium Speed Switching Applications Up to 18 GHz.Low Capacitance - 0.10 pF Typical Fast Switching - 15 nS Typical SiO2 Passivation