Advanced Semiconductor
MSC1150M NPN SILICON RF POWER TRANSISTOR
The ASI MSC1150M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. Internal Input/Output Matching Networks PG = 7.8 dB at 150 W/1150 MHz Omnigold Metalization System
AVD350 NPN SILICON RF POWER TRANSISTOR
The ASI AVD350 is high power Class C transistor, designed for avionics applications in 960-1215 MHzInternal Input/Output Matching Networks PG = 7.0 dB at 350 W/1150 MHz Omnigold Metalization System 3:1 Load VSWR Capability
SD1285 NPN SILICON RF POWER TRANSISTOR
The ASI SD1285 is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz.
BLY91A NPN SILICON POWER TRANSISTOR
The ASI BLY91A is Designed for 28 V Class A, B and C Transmitter Applications.
SD4027 NPN SILICON RF POWER TRANSISTOR
The ASI SD4027 is Designed for Television Band IV & V Applications up to 860 MHz.Common Emitter PG = 8.5 dB at 4.0 W/860 MHz Omnigold Metalization System
J02015A NPN SILICON RF POWER TRANSISTOR
The ASI J02015A is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment.Internal Input Matching Network PG = 8.4 dB at 70 W/400 MHz Omnigold Metalization System
UHBS60-2 NPN SILICON RF POWER TRANSISTOR
The ASI UHBS60-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. Internal Input Matching Network PG = 7.0 dB at 60 W/960 MHz Omnigold Metalization System
2N6166 NPN SILICON RF POWER TRANSISTOR
The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
MRF240A NPN SILICON RF POWER TRANSISTOR
The ASI MRF240A is Designed for Class C Amplifier Applications in VHF Mobile Radios.PG = 9.0 dB Min. at 40 W /160 MHz ?C = 55% Min. at 40 W /160 MHz Omnigold Metalization System
ALR030 NPN SILICON RF POWER TRANSISTOR
The ASI ALR030 is Designed for 1200 " 1400 MHz, L-Band Applications.Internal Input/Output Matching Network PG = 7.0 dB at 30 W/ 1400 MHz Omnigold Metalization System