The ASI MLN1027SS is Designed for Class A, Linear Applications up to 1.0 GHz.Class A Operation PG = 11 dB at 0.5 W/1.0 GHz Omnigold Metalization System

The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. Common Emitter PG = 10 dB at 25 W/175 MHz Omnigold Metalization System

The ASI 5082-0335 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies.

The ASI SD1143 is 12.2 V Class C Transistor, designed for VHF mobile communications. Common Emitter PG = 10 dB at 10 W/175 MHz Omnigold Metalization System

The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

The AP0300A-00 is a Planar Silicon PIN Diode Chip Designed for High Speed Switch and Limiter Applications Up to 18 GHz.

The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz.Internal Input/Output Matching Networks PG = 8.2 dB at 150 W/1150 MHz Omnigold Metalization System 30:1 load VSWR capability

The BLY92C is Designed for Class C FM Amplifier Applications up to 250 MHz.PG = 11 dB Typical at 175 MHz High Load VSWR Capability Omnigold Metalization System

The ASI TPV597 is designed for 1.0 W stage in Band V TV transposes amplifiers up to 860 MHz. Common Emitter, 20 V operation PG = 10.5 dB at 1.0 W/860 MHz Omnigold Metalization System Emitter Ballasting

The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. High Power Gain Infinite VSWR