The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges.POUT = 750 mW PG = 8.0 dB min. ? = 60% typical R1 suffix " Tape and Reel, 500 units R2 suffix " Tape and Reel, 2500 units

The AT12020-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.

The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band.

The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters.Gold Metalization Intrnal Matching Emitter Ballasting

The DVB4376-99 is Designed for use in Moderate Power Multiplier Applications, Cathode Connected to Case.

The ASI TRW3005 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. PG = 4.5 dB min. at 5 W / 3,000 MHz Hermetic Microstrip Package Omnigold Metalization System

The ASI 1N23ER is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.High burnout resistance Low noise figure Hermetically sealed package

The ASI MRAL2023-6 is a Common Base Device Designed for class C Amplifier Applications in L-Band FM Microwave Links.Gold Metallization Emitter Ballasting Input Matching

The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability.

The ASI 5082-2900 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode.