The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PG = 7.0 dB min.at 50 W / 1215 MHz Common Base Omnigold Metalization System

The ASI BLF278 is a Dual Common Source N-Channel Enhancement- Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

The D1-28Z is Designed for General Purpose Class C Amplifier Applications up to 1.0 GHz.PG = 8.0 dB Typ. at 1 W/1,000 MHz Emitter Ballasting for Ruggedness Omnigold Metallization System

The ASI MLN1033F is Designed for Class A Linear Applications up to 1.0 GHz.Class A Operation PG = 12 dB at 2.0 W/1.0 GHz Omnigold Metalization System

The ASI TH416 is a 28 V epitaxial planar transistor primarily designed for SSB communications. PG = 12 dB min. at 130 W/30 MHz IMD = -30 dBc max. at 130 W(PEP) Omnigold Metalization System Emitter Ballasting

The ASI 5082-2350 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode.

The ASI MRF428 is Designed for high voltage applications up to 30 MHzPG = 14 dB min. at 150 W/30 MHz IMD3 = -30 dBc max. at 150 W(PEP) Omnigold Metalization System

The ASI UMIL60 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment Internal Input Matching Network PG = 8.4 dB at 60 W/400 MHz Omnigold Metalization System

The ASI ASAT30 is Designed for General Purpose Class C Operation up to 1.7 GHz.Internal Input/Output Matching Network PG = 9.0 dB at 30 W/1.7 GHz Omnigold Metalization System

The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. Hermetically Sealed Package Gold Metallization