The AMIS-710251-A6 (PI251MC-A6) is a contact imaging sensor (CIS) module. It is a successor module to its predecessor, AMIS-710222-A6 (PI222MC-A6). This possesses all qualities of its predecessor, except, it has one outstanding feature - it operates from a single 5V supply. Like its predecessor, it is composed of 13 AMIS-720220 (PI3020) sensor chips. The AMIS-720220 is a 200 dots per inch (dpi) solid-state line imaging array, also a product of AMI Semiconductor. This imaging device is fabri

The AMIS-710226 (PI226M-A4) is a contact image sensor (CIS) module using MOS image sensor technology for high-speed performance and high sensitivity. The AMIS-710226 is suitable for scanning A4 size (216mm) documents with 8 dots per millimeter (dpm) resolution. Applications include fax machines, game systems, variety of mark readers and other automation equipment requiring document scanners

The AMIS-42675 CAN transceiver is the interface between a controller area network (CAN) protocol controller and the physical bus. It may be used in both 12V and 24V systems. The transceiver provides differential transmit capability to the bus and differential receive capability to the CAN controller.

The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology with reliability inhancements for medical users.

The AMIS-39101 is a robust high-side driver IC featuring eight independent high current output drive channels along with a number of integrated fault-protection circuits. This highly integrated product is designed for controlled delivery of power to a large variety of loads in industrial applications including motors, relays and LED arrays, among others. With all driver output channels in the conducting state, each channel can source up to 350mA of continuous current (resistive load). In cases w

The N01L163WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.

The N01L1618N1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using AMI Semiconductor™s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.

DESCRIPTION AND PURPOSE: This is the Final PCN to notify customers that the changes described in Initial PCN# 12874, located at ON Semiconductor is pleased to announce the continuation of the MOSAIC 35 FAB transfer process in their internal factory COM 1, located on the ON Semiconductor site in Phoenix, AZ, to manufacture MOSAIC 3 Bipolar Technology products. COM1 is an ISO9001 certified facility and currently manufactures the MOSAIC 5 product family. MOSAIC 3 products were previously fabricated

AMI Semiconductor™s AMIS-721250 (PI6050D) contact image sensor (CIS) is a selectable 600 or 1200 dot per inch (dpi) resolution linear image sensor, which employs AMI Semiconductor™s proprietary CMOS image sensing technology. The sensor contains an on-chip output amplifier, power-down circuitry and parallel transfer features that are uniquely combined with the present-day active-pixel-sensor technology. The image sensors are designed to be cascaded end-to-end on a printed circuit boa

The AMIS-710252-A6 (PI252MC-A6-R) is a contact imaging sensor (CIS) module. It operates from a single 5V supply. It is composed of 13 AMIS-720233 (PI3033) sensor chips. The AMIS-720233 is a 200 dots per inch (dpi) solid-state line imaging array, also a product of AMI Semiconductor. This imaging device is fabricated using MOS imaging sensor technology for its high-speed performance and high sensitivity.