DescriptionFigure 2: Pinout (X - ray op View)BSTXVBATTVRAM234567CEXT8PINNAMEDESCRIPTIONPINNAMEDESCRIPTIONbefore the DC blocking72BS8resistor before the DCblocking capacitor to set the34VBATTConnection5VRAMP6CEXTBypass (VREG)3AW02/2009Sdamage. Functional operation is not implied under these conditions. Eof time may adversely affect reliability.ETable 2: AFigure 3: Eof each pin are recorded. The ratings on each pin degradation. BS TX VBATT VRAMP23456 CEXT78 PARAMETER MIN MAX UNITSVBATT) - +5.5 VRF

SPECIFICATIONS Parameters Test Conditions Minimum Typical Maximum Units CLASS 1 (155 Mb/s) Rise and Fall Time 100mA 2.3 ns Link Bandwidth (­3dB) 155 MHz Data Rate 270 Mbps Coupled Optical Power 100mA, 62.5µm Fiber 35 uw CLASS 2 (622 Mb/s) Rise and Fall Time 1 ns Link Bandwidth (­3dB) 350 MHz Data Rate 625 Mbps Coupled Optical Power 100mA, 62.5µm Fiber 15 uw RATINGS Peak Wavelength 100mA 1260 1300 1340 nm Forward Voltage 100mA 1.3 V Spectral Width (FWHM) 100mA 120 nm Storage T

As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry.

The 13PD300-FC, an InGaAs photodiode with a 300mm-diameter photosensitive region packaged in a TO-46 header and aligned in an FC active device mount, is designed for applications in both moderate-bit-rate fiberoptic communications and high sensitivity measurement equipment. This device is one of the most versatile of the Telcom Devices™ family of optoelectronic components. Planar semiconductor design and dielectric passivation provide superior performance. Reliability is assured by hermeti

The ACA2402 is a highly linear, monolithic GaAs RF amplifier that has been developed to replace, in new designs, standard CATV hybrid amplifiers. Offered in a convenient surface mount package, the MMIC consists of two pairs of parallel amplifiers that are optimized for exceptionally low distortion and noise figure

The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset designs supporting E911 (GPS enabled). The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The sel

12/2008Application NoteSections as Independent Rev

DESCRIPTIONFigure 1: Functional Block Diagram StepAtteatorPowerDeteorClppllteSlteAtteatorClDeteorMatworklteG2Data Sheet - Rev 2.210/2008AWM6422Figure 2: Pinout (X-ray Top View)Table 1: Pin DescriptionVCCRFOUTVBIASRFINDETGND1GND1023456987VCCGNDGNDGND1211VCCVATTNPINNAMEDESCRIPTIONCC234CC789CCData Sheet - Rev 2.210/2008 AWM64223ELECTRICAL CHARACTERISTICSTable 2: Absolute Minimum and Maximum RatingsStresses in excess of the absolute ratings may cause permanent damage. Functional operation is not imp

The ANADIGICS DBS (Direct Broadcast Satellite) Tuner ic is intened for use in hgh volume,low cost manufacturing of compact DBS tuners for satellite receivers and integrated satellite ready tv/vtr recievers

The PD5M is an InGaAs photodiode with a photosensitive region 5mm in diameter. Applications include sensing and other high sensitivity instrumentation. Class A devices feature very low dark current and high shunt resistance.