The AWT6102 is a 3.5V power amplifier module for use in dual Mode GSM/DCS/PCS wireless handsets and communication systems.InGaP HBT Technology High Efficiency 55% GSM High Efficiency 50% DCS High Efficiency 45% PCS Low Leakage Current ( <10mA) SMT Module Package Small Foot Print (9.2mm X 11.6mm) Low Profile (1.55 mm) 50 W Input and Output Matching Minimum Number of External Components

This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function.

The ARA 2005is a monolithic GaAs device designed to perfom the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable Modem . It incorporates a digitally controlled precision step attenuator thas is preceded by an ultra low noice amplifier stage ,and followed by an ultra-linear output driver amplifier.

The RFS P7022 is a Power Amplifier Kit containing the RFS P2010 and the RFS P5022, high-performance PAs designed for use in transmit applications in the 2.4 " 2.5 GHz frequency band and in the 4.9 " 5.9 frequency band (respectively).

The PD075-HL3 is an InGaAs photodiode with a photosensitive region 75?m in diameter. It has been designed for use in low cost, low noise, linear analog optical receivers. Planar semiconductor design and dielectric passivation provide low noise performance.

The AWT6271 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and s

The AWT6136 is a high power, high efficiency amplifier module for CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current mode is digitally controlled to reduce power drain on the system battery. The 6 mm x 6 mm x 1.5 mm laminate package is self contained, incorporating 50 ? input and output matching networks optimized for output power, linear

The ANADIGICS RFS P5032 power amplifier is a high performance InGaP HBT power amplifier IC designed for transmit applications in the 4.9-5.9 GHz bands. The PA exhibits unparalleled linearity and efficiency for IEEE 802.11a WLAN systems under the toughest signal configurations within these standards. The PA is biased by a single +3.3 V supply and consumes ultra-low current in the OFF mode.

The ANADGICS ATA00501 is a 5V low noise transimpedance amplifier with AGC designed to be used in OC-3/STM-1 fiber optic links. The device is used in conjuction with a photodetector (PIN diode or avalanche photodiode) to convert an optical signal into an output voltage.

DESCRIPTIONThe AWS5532R is a single pole, double throw(SPDT) RF switch developed for applicationsrequiring very low distortion at high input drive levels.Manufactured in ANADIGICSs state-of-the-art pHEMTprocess, the device uses patented circuit topologiesto provide low insertion loss, high port-to-portisolation, and high linearity performance. TheAWS5532R is offered in a 12-lead 3 mm x 3 mm x 1 mmQFN package.FEATURESLow Insertion Loss: 0.4 dB at 2 GHzHigh Isolation: >25 dBHigh Input P0.1 dB: