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ANADIGICS, Inc

anadigics.com

02/2009Figure 1: Block DiagramFInternal Reference

DescriptionFigure 2: Pinout (X - ray op View)BSTXVBATTVRAM234567CEXT8PINNAMEDESCRIPTIONPINNAMEDESCRIPTIONbefore the DC blocking72BS8resistor before the DCblocking capacitor to set the34VBATTConnection5VRAMP6CEXTBypass (VREG)3AW02/2009Sdamage. Functional operation is not implied under these conditions. Eof time may adversely affect reliability.ETable 2: AFigure 3: Eof each pin are recorded. The ratings on each pin degradation. BS TX VBATT VRAMP23456 CEXT78 PARAMETER MIN MAX UNITSVBATT) - +5.5 VRF

Relevant Keywords: 
VRAMP23456, DISABLED-PARAMETER, CEXT78, AWT6155_Rev_2, AWT6155RTXT

no title - download PDF datasheet, node 1243

SPECIFICATIONS Parameters Test Conditions Minimum Typical Maximum Units CLASS 1 (155 Mb/s) Rise and Fall Time 100mA 2.3 ns Link Bandwidth (­3dB) 155 MHz Data Rate 270 Mbps Coupled Optical Power 100mA, 62.5µm Fiber 35 uw CLASS 2 (622 Mb/s) Rise and Fall Time 1 ns Link Bandwidth (­3dB) 350 MHz Data Rate 625 Mbps Coupled Optical Power 100mA, 62.5µm Fiber 15 uw RATINGS Peak Wavelength 100mA 1260 1300 1340 nm Forward Voltage 100mA 1.3 V Spectral Width (FWHM) 100mA 120 nm Storage T


AWT6166R GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.0

As with previous generations, the AWT6166R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry.

Relevant Keywords: 
AWT6166RM15P8, AWT6166R

13PD300-FC High Performance InGaAs p-i-n Photodiode ˜FC™ Active Device Mount

AWT6130 Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0

The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset designs supporting E911 (GPS enabled). The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The sel

Relevant Keywords: 
AWT6130

12/2008Application NoteSections as Independent Rev

12/2008Application NoteSections as Independent Rev

Relevant Keywords: 
VIA25241918, P1dB, OIP3, ARA05050_A

10/2008AWM6422Data SheetM18 Package12 Pin 4.5 mm x

DESCRIPTIONFigure 1: Functional Block Diagram StepAtteatorPowerDeteorClppllteSlteAtteatorClDeteorMatworklteG2Data Sheet - Rev 2.210/2008AWM6422Figure 2: Pinout (X-ray Top View)Table 1: Pin DescriptionVCCRFOUTVBIASRFINDETGND1GND1023456987VCCGNDGNDGND1211VCCVATTNPINNAMEDESCRIPTIONCC234CC789CCData Sheet - Rev 2.210/2008 AWM64223ELECTRICAL CHARACTERISTICSTable 2: Absolute Minimum and Maximum RatingsStresses in excess of the absolute ratings may cause permanent damage. Functional operation is not imp

Relevant Keywords: 
GHz,54, AWM6423, AWM6422_Rev_2, AWM6422NOTESWARNINGIMPORTANT, AWM64223ELECTRICAL

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